Recently, "Nanotechnology, 2017, 28: 095301" officially published Professor Xu Zhimou's team's latest research on ordered nanostructure arrays on semiconductor surfaces. Based on the preparation of high aspect ratio AAO masking nanoholes and nanocolumn arrays. (Fabrication of nanopore and nanoparticle arrays with high aspect ratio AAO masks). Prof. Xu Zhimou was the author of the correspondence. Dr. Li Zeping was the first author, Ph.D. student Qu Xiaopeng and Associate Professor Wang Shuangbao participated in the related work of the paper.
Semiconductor surface ordered nanostructure array components have excellent performance, and have extensive applications in materials, information, new energy, environment and biomedical fields. The commonly used preparation methods include: nanoimprint technology, holographic exposure technology, focused ion beam etching technology, electron beam and other nanolithography technologies. However, these methods all require expensive equipment as a support, and it is difficult to realize the preparation of nanopores or nanocolumns in a large area (for example, a common 2 to 4 inch semiconductor chip in production). Nano-preparation technology has always been one of the key problems plaguing semiconductor nanodevices for large-scale applications. At present, there is no good method to fabricate arrays of ordered nanostructures on large-area semiconductor surfaces at low cost.
Xu Zhimou's team used synthetic nanoporous anodized aluminum oxide (AAO) as a mask to prepare ordered nanostructured arrays on the surface of semiconductors, achieving a breakthrough in the large-area, low-cost manufacturing technology of nanodevices. The process solves a series of key issues such as the regulation of nano-aperture (20-500 nm), AAO mask and semiconductor surface adsorption, and in particular, it breaks through the key technology of thick film (above 10 ïm) AAO as a mask. AAO mask etching technology usually uses ultra-thin AAO film (200-1000 nm) as a mask, but due to the characteristics of ultra-thin AAO thin film, fragile, large area transfer difficulty and difficult to remove later, it is usually only able to complete smaller Mask etching process with an effective area (eg 2 cm * 2 cm). The breakthrough of thick-film AAO mask etching technology can reach a film thickness of 10 μm or more. It has high mechanical strength, easy transfer, and easy removal. It can easily realize the preparation of masks with large areas, such as 2 to 4 inches and above. The discovery and breakthrough of this technology will make it possible to produce ordered nanostructure arrays on semiconductor surfaces with large area and low cost, and it is of great significance to promote the application of nanostructure semiconductor devices. At present, Xu Zhimou's team is working with companies such as Optical Technology and Huacan Optoelectronics to conduct preliminary research on the application of nano-optoelectronic devices, and many invention patents are being filed.
The silicon nanoholes and nanocolumn structures prepared using the thick film AAO mask etch technique are shown in the figure below.
The project was funded by the National 863 Program (No. 2015AA043302) and the National Natural Science Foundation of China (No. 61474048). The progress of this research will also play a very good technical support role for the completion of the national key R&D project approved by Prof. Xu Zhimou’s team in April 2017 (Application No. SQ2017YFGX020222, project leader).
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