Abstract With the increasing demand for people's lives, the performance and functions of various electronic products have been greatly improved. At the same time, the physical limitations of traditional electronic materials have gradually emerged, and people are increasingly eager to acquire a new generation of electronic raw materials with more powerful performance as the electronics industry...
With the increasing demand for people's lives, the performance and functions of various electronic products have been greatly improved. At the same time, the physical limitations of traditional electronic materials have gradually emerged, and there is an increasing need for a new generation of electronic raw materials with more powerful performance as the cornerstone for the electronics industry to continue to take off. Researchers at the University of Manchester in the United Kingdom published a paper in Nature Nanotechnology, saying that they use a two-dimensional material (that is, a film material with only one or a few atomic layers thick) to form a new material that exhibits excellent capabilities. In the future, it will become the material of choice for the manufacture of a new generation of transistors.
Hexagonal boron nitride, again known as white graphene, was discovered in a study by the University of Manchester in 2004 and is now a member of the two-dimensional material family. At the time, researchers at the University of Manchester stated that the substance could build a two-dimensional material through a heterojunction that would meet the standards of industrial production design in the future.
Now, the research team has for the first time confirmed that the electronic operation mode in the heterojunction can be greatly changed by precisely controlling the direction of stacking of the crystal layers, so that the material has the practical value of putting into use.
The group led by Professor Konstantin Novoselov, a professor of the University of Manchester who won the 2010 Nobel Prize in Physics, successfully synthesized a graphene material containing a hexagonal boron nitride interlayer, which stores electron energy. And the function of momentum. The invention of this material opens up a new way for the design and manufacture of ultra-high frequency equipment such as electronic and photoelectric sensors in the future.
The joint researcher, Professor Lawrence Yves said: "This study combines the classical motion law with the quantum wave characteristics of electrons, enabling the material to overcome obstacles and achieve the desired effect."
Professor Vladimir Falku of Lancaster University said: "Through tunneling and negative differential conductance observations, we believe that this new material made of multilayer graphene and hexagonal boron nitride shows The new system has considerable potential in electronic applications."
According to optimistic estimates, after further design improvements, the material will be used in the manufacture of high-frequency electronic equipment. Perhaps the time is ripe for this multi-layer composite system to take shape in the field of electronic materials, and the time for the electronic materials field to be replaced may no longer be far away.
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